It is also feasible to make P-channel IGBTs and for which the doping profile in each layer will be reversed. The N+ layer at the top is the source or emitter and the P+ layer at the bottom is the drain or collector. It shares similar MOS gate structure and P wells with N+ source regions. It is evident that the silicon cross-section of an IGBT is almost identical to that of a vertical Power MOSFET except for the P+ injecting layer. This is one of several structures possible for this device. The basic schematic of a typical N-channel IGBT based upon the DMOS process is shown in Figure 1. It also has excellent forward and reverse blocking capabilities. ![]() It has superior current conduction capability compared with the bipolar transistor. It canbe easily controlled as compared to current controlled devices (thyristor, BJT) in high voltage and high current applications.
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